INJ0212AP1 high speed switching silicon p-channel mosfet isahaya electronics corporation description inj0210ap1 is a silicon p-channel mosfet. this product is most suitabl e for use such as portable machinery, because of low voltage drive and low on resistance. feature ?input impedance is hi gh, and not necessary to consider a drive electric current. ?high drain current i d =-2.5a ?v th is low, and drive by low voltage is possible. v th =1.02.5v ?low on resistance. r ds(on) =95m(typ). ?high speed switching. application switching outline drawing unitmm maximum rating ta=25 symbol parameter rating unit equivalent marking vdss drain-source voltage -30 v vgss gate-source voltage 20 v i d (dc) drain current (dc) -2.5 a i dp drain current(pulse) 1 -5 a p d total power dissipation 750(2) mw tch channel temperature 150 tstg storage temperature -55+150 1p w Q10s, duty cycleQ1% 2package mounted on 9mm19mm1mm glass-epoxy substrate electrical characteristics ta=25 parameter symbol test condition limit unit min typ max drain-source breakdown voltage v (br)dss i d =-100av gs =0v -30 - - v gate-source leak current i gss v gs =20vi d =0a - - 10 a zero gate voltage drain current i dss v ds =-30vv gs =0v - - -1 a gate threshold voltage v th i d =-250av ds =v gs -1 - -2.5 v forward transfer admittance |y fs | v ds =-10vi d =-1.2a - 3.0 - s static drain-source on-state resistance r ds(on) i d =-0.5av gs =-4.5v - 120 - m? i d =-0.5av gs =-10v - 95 - input capacitance c iss v ds =-10vv gs =0vf=1mhz - 500 - pf output capacitance c oss - 100 - switching time t on v dd =-10vi d =-2.5av gs =-0-5v - 35 - ns t off - 50 - 1.5 0.5 marking 0.4 0.4 4.4 1.6 3.0 2.4 1.0 1.5 s d g terminal connector ssource ddrain ggate jeitasc-62 jedecsot-89 lot no type name j j s d g
INJ0212AP1 high speed switching silicon p-channel mosfet isahaya electronics corporation drain current id (a) -0.1 -1 -0.01 0.1 static drain-source on-state resistance rds(on) ( ? ) rds(on) - id 1 0.01 ta = 25 vgs = - 4.5v forward transfer admittance |yfs| (s) -0.01 -10 -0.1 -1 drain current id (a) 10 1.0 0.1 |yfs| - id ta = 25 vds = - 10v reverse drain current idr (a) idr - vsd 0 -0.6 -1.2 -10 -1.0 -0.8 -0. 4 -0.2 -0.01 -1 -0.1 source-drain voltage vsd (v) vgs = 0v ta = 25 -1 -2 -3 - 4 -5 id - vgs drain current id (a) -0.01 -10 -0.1 -1 gate-source voltage vgs (v) 0 vds = -10v ta = 25 0-10 0.4 0.3 0.2 0.1 -8 -6 -4 -2 gate-source voltage vgs (v) static drain-source on-state resistance rds(on) ( ? ) 0.5 0 rds(on) - vgs id = -0.5a ta = 25 id - vds 0 -1.0 -0.5 drain-source voltage vds (v) drain current id (a) -0.5 0-1 ta = 25 vgs = -2.5v -2.8v -3.0v -4.5v -10v
INJ0212AP1 high speed switching silicon p-channel mosfet isahaya electronics corporation t - id drain current id (a) -1 -0.01 1 switting time t (ns) 1000 -0.1 10 100 ta = 25 td(off ) tf td(on) tr -10 capacitance c (pf) -0.1 -100 drain-source voltage vds (v) -1 1000 c - vds 100 10 1 f = 1mhz vgs = 0v ta = 25 ciss coss crss 300 150 100 125 0 0150 25 50 75 ambient temperature ta ( ) 200 drain power dissipation pd (mw) 600 750 450 p d - ta 900 single pulse glass-epoxy substrate (19L9L1L) drain-source voltage vds (v) -1 -10 -0.1 -0.1 -100 -0.01 aso -10 drain current id (a) -1 pw=100us 1ms 10ms dc (750mw) (19L9L1L) glass-epoxy substrate single pulse ta = 25 test circuit r l ta = 25 10us dut y Q 1% v dd = 30v common source out in in 50 v dd 0v -5v tr tf ton toff 90% v ds(on) ?input waveform ?output waveform v dd 10% td(on) td(off) 90% -5v 10% 0v
6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. jul.2014
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